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PTF080451
LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
* * Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P-1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 450 mA, f = 959.8 MHz
0 Efficiency 55 50 45 40 35 400 kHz 600 kHz 30 25 20 15 10 36 38 40 42 44 46 48 50
*
Modulation Spectrum (dB)
-10 -20 -30 -40 -50 -60 -70 -80 -90
Drain Efficiency (%)
* * * *
Output Power (dBm)
PTF080451E Package 30265
ESD: Electrostatic discharge sensitive device--observe handling precautions!
RF Characteristics at TCASE = 25C unless otherwise indicated
EDGE Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, P OUT = 22.5 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Gain Drain Efficiency
Symbol
EVM (RMS) ACPR ACPR Gps
Min
-- -- -- -- --
Typ
2.0 -62 -76 18 40
Max
-- -- -- -- --
Units
% dBc dBc dB %
D
Two-Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 45 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion Data Sheet 1 of 9
Symbol
Gps
Min
17 40 --
Typ
18 42 -32
Max
-- -- -30
Units
dB % dBc 2004-06-24
D
IMD
PTF080451
DC Characteristics at TCASE = 25C unless otherwise indicated
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 A VDS = 28 V, V GS = 0 V VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 450 mA VGS = 10 V, V DS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 -- -- 2.5 --
Typ
-- -- 0.1 3.2 --
Max
-- 1.0 -- 4 1.0
Units
V A V A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 184 1.05 -40 to +150 0.95
Unit
V V C W W/C C C/W
Typical Performance (measurements taken in production test fixture)
Modulation Spectrum
P OUT = 20 W, f = 959.8 MHz
2.1 -20
9
EDGE EVM Performance
V DD = 28 V, IDQ = 450 mA, f = 959.8 MHz
90 80
EVM RMS (average %) .
EVM RMS (average %) .
1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 0.25
-30 -40 400 KHz -50 -60 -70 600 KHz -80 -90 -100 0.75
Modulation Spectrum (dBc)
EVM
8 7 6 5 4 3 2 1 0 32 34 36 38 40 42 44 46 48 Efficiency EVM
60 50 40 30 20 10 0
0.35
0.45
0.55
0.65
Quiescent Current (A)
Output Power (dBm)
All published data at TCASE = 25C unless otherwise indicated. Data Sheet 2 of 9 2004-06-24
Drain Efficiency (%)
70
PTF080451
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
VDD (as measured in a broadband circuit) = 28 V, IDQ = 450 mA, f1 = 959 MHz, f2 = 960 MHz
0 -10 -20 3rd Order
Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency
VDD = 28 V, IDQ = 450 mA
18 80
17
Gain Efficiency
70
IMD (dBc)
5th 7th
Gain (dB)
-30 -40 -50 -60 -70 -80 36 38 40 42 44 46
16
60
15
Output Pow er
50
48
14 860
880
900
920
940
40 960
Output Power (dBm), PEP
Frequency (MHz)
IM3 vs. Output Power at Selected Biases
VDD = 28 V, f1 = 959, f2 = 960 MHz
-20
Broadband Performance
VDD = 28 V, IDQ = 450 mA, POUT = 22.5 W
60 0 -4 Efficiency 40 Return Loss 30 -12 -8
Gain (dB), Efficiency (%)
-25 -30
50
IMD (dBc)
-35 -40 -45 -50 -55 -60 36
350 mA
450 mA
20 Gain 10 860 880 900 920 940
-16 -20 960
550 mA
38
40
42
44
46
Output Power (dBm), PEP
Frequency (MHz)
All published data at TCASE = 25C unless otherwise indicated. Data Sheet 3 of 9 2004-06-24
Return Loss (dB)
Efficiency (%), POUT (dBm)
PTF080451
Typical Performance (cont.)
Power Sweep
VDD = 28 V, f = 960 MHz
19.5 IDQ = 560 mA 19.0
21 20 19
Gain & Efficiency vs. Output Power
V DD = 28 V, IDQ = 450 mA, f = 960 MHz
70 60 Gain 50 40 30 Efficiency 20 10 0 30 35 40 45 50
18.5
18.0 IDQ = 450 mA 17.5 17.0 16.5 30 34 38 42 46 50 IDQ = 340 mA
18 17 16 15 14
Output Power (dBm)
Output Power (dBm)
Output Power (at 1 dB Compression) vs. Supply Voltage
IDQ = 450 mA, f = 960 MHz
49.5 49.0 48.5 48.0 47.5 47.0 46.5 24 26 28 30 32
IS-95 CDMA Performance
VDD = 28 V, IDQ = 450 mA, f = 880 MHz
56 48 ACP FC - 0.75 MHz -40 -45 -50 -55 Efficiency 24 16 8 0 36 38 40 42 ACPR FC + 1.98 MHz -60 -65 -70 -75
40 32
Supply Voltage (V)
Output Power (dBm), Avg.
All published data at TCASE = 25C unless otherwise indicated. Data Sheet 4 of 9 2004-06-24
Adj. Ch. Power Ratio (dBc)
Output Power (dBm)
Drain Efficiency (%)
Drain Efficiency (%)
Power Gain (dB)
Gain (dB)
PTF080451
Typical Performance (cont.)
Three-Carrier CDMA 2000 Performance
VDD = 28 V, IDQ = 450 mA, f = 880 MHz
55 ACP Up 50 -41
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage. Series show current.
1.03 0.75 A 1.50 A 2.25 A 1.01 1.00 0.99 0.98 0.97 0.96 -20 3.00 A 3.75 A 4.50 A
Adj. Ch. Power Ratio (dBc)
Normalized Bias Voltage
-44 ALT Up ACP Low -47 -50 -53 -56 Efficiency -59 -62 -65 36 37 38 39 40 41 42 43 44 45
1.02
Drain Efficiency (%)
45 40 35 30 25 20 15
0
20
40
60
80
100
Output Power (dBm), PEP
Case Temperature (C)
Broadband Circuit Impedance
Z0 = 50
RA T OR --->
D
Z Source
Z Load
T OW A
RD G E NE
G S
- WAVELE NGTH S
Z Load
980 MHz
0.0 0.1
0.2
MHz 860 920 940 960 980
R 8.20 8.30 8.40 8.50 8.70
jX -1.70 -0.12 0.38 0.85 1.40
R 3.00 3.10 3.10 3.20 3.20
jX 0.70 1.60 1.90 2.20 2.40
D LOAD S TOW AR
Frequency
Z Source
Z Load
860 MHz
-
860 MHz
GT H EL EN
0.1
All published data at TCASE = 25C unless otherwise indicated. Data Sheet 5 of 9 2004-06-24
W <---
AV
0.3
0.2
0 .1
Z Source
980 MHz
PTF080451
Test Circuit
VDD
C14 .01F C15 .01F R6 1.0kV R5 1.3kV
LM7805
QQ1 C16 .01F R4 2kV
R3 10V +C1 10F 35V
R1 10V C2 0.1F 50V R2 1kV C3 33pF C6 33pF C7 1F
L1 +C8 10F 35V C9 0.1F 50V + C10 10F 35V VDD
Q1 BCP56 C4 33pF RF_IN
l4
DUT
l7 l5
C13 33pF
l1
l2
l3
C5 5.1pF
l6
l8
C11 1.2pF C12 1.0pF
l9
RF_OUT
0 8 0 4 5 1 _ sch
Test Circuit Schematic for 960 MHz Circuit Assembly Information DUT PCB Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 PTF080451 0.76 mm. [.030"] thick,
r = 4.5
LDMOS Transistor 2 oz. copper Dimensions: L x W (mm.) 0.505 x 0.053 0.765 x 0.053 0.335 x 0.053 2.000 x 0.025 0.360 x 0.506 1.200 x 0.510 0.890 x 0.050 0.880 x 0.085 0.195 x 0.054
Rogers TMM4 Dimensions: L x W (in.) 12.83 x 1.35 19.43 x 1.35 8.51 x 1.35 50.80 x 0.64 9.14 x 12.85 30.48 x 12.95 22.61 x 1.27 22.35 x 2.16 4.95 x 1.37
Electrical Characteristics at 960 MHz 0.075 , 50.770 0.114 , 50.770 0.050 , 50.770 0.289 , 73.660 0.060 , 9.350 0.199 , 9.190 0.132 , 52.470 0.134 , 38.020 0.029 , 50.200
Data Sheet
6 of 9
2004-06-24
PTF080451
Test Circuit (cont.)
C10 R3 R4 LM
10 0
C2
10 0
12 0
C4
080451in_01
Reference Circuit1 (not to scale) Component C1, C8, C10 C2, C9 C3, C4, C6, C13 C5 C7 C11 C12 C14, C15, C16 L1 Q1 QQ1 R1, R3 R2 R4 R5 R6 Description Capacitor, 10 F, 35 V, Tant TE Series SMD Capacitor, 0.1 F, 50 V Capacitor, 33 pF Capacitor, 5.1 pF Capacitor, 1 F, 50 V Capacitor, 1.2 pF Capacitor, 1.0 pF Capacitor, .01 F Ferrite, 6 mm Transistor Voltage Regulator Resistor, 10 ohm Resistor, 1.0 k-ohm Resistor, Variable 2 k-ohm, 4 W Resistor, 1.3 k-ohm 1/10 W, 0603 Resistor, 1.0 k-ohm 1/10 W, 0603 Manufacturer Digi-Key Digi-Key ATC ATC Digi-Key ATC ATC Digi-Key Philips Infineon Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key P/N or Comment PCS6106TR-ND P4525-ND 100B 330 100B 5R1 19528-ND 100B 1R2 100B 1R0 PCC1772CT-ND 53/3/4.6-452 BCP56 LM7805 100ECT-ND 1KQBK 3224 W-202ETR-ND P1.3KGCT-ND P1.0KGCT-ND
1Gerber files for this circuit are available on request.
Data Sheet
+
C1
QQ1 C6
+ 10
C15 R1 R2 R5 C3 R6
L1 C7
35V
Q1
C8
C9
C12 C13
C5 C11 080451out_01
080451_assy
7 of 9
+
C14 C16
10 35V
10 35V
2004-06-24
PTF080451
Ordering Information
Type PTF080451E Package Outline 30265 Package Description Thermally enhanced, flange mount Marking PTF080451E
Package Outline Specifications Package 30265
(45 X 2.03 [.080]) 7.11 [.280] C L
D
2X 2.590.38 [.107 .015] 15.600.51 [.614.020] FLANGE 9.78 [.385]
S
C L LID 10.160.25 [.400.010]
G
2X R1.60 [.063] 2x 7.11 [.280] 15.23 [.600] 10.160.25 [.400.010] 0.51 [.020] 3.480.38 [.137.015] 0.0381 [.0015] -A20.31 [.800]
H-30265-2-1-2303
4x 1.52 [.060]
SPH 1.57 [.062]
1.02 [.040]
Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
8 of 9
2004-06-24
PTF080451 Revision History: 2004-06-24 Previous Version: 2003-11-04, Developmental Data Sheet Page Subjects (major changes since last revision) all Include further data Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2004-06-24 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany (c) Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 of 9

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